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| IPD09N03L OptiMOS(R) Buck converter series Feature * N-Channel Product Summary VDS RDS(on) ID 30 8.9 30 P- TO252 -3-11 V m A * Logic Level * Low On-Resistance R DS(on) * Excellent Gate Charge x R DS(on) product (FOM) * Superior thermal resistance * 175C operating temperature * Avalanche rated * dv/dt rated * Ideal for fast switching buck converter Type IPD09N03L Package Ordering Code P- TO252 -3-11 Q67042-S4110 Marking 09N03L Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current1) TC=25C TC=100C Symbol ID Value 30 30 Unit A Pulsed drain current TC=25C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 120 150 10 6 20 100 -55... +175 55/175/56 kV/s V W C mJ Avalanche energy, single pulse ID=30A, V DD=25V, RGS=25 Repetitive avalanche energy, limited by Tjmax 2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/s, T jmax=175C Gate source voltage Power dissipation TC=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-17 IPD09N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 1 max. 1.5 100 75 50 Unit K/W Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = V DS ID = 50 A Zero gate voltage drain current V DS=30V, VGS=0V, Tj=25C V DS=30V, VGS=0V, Tj=125C A 0.01 10 1 10.6 7.2 1 100 100 13.6 8.9 nA m Gate-source leakage current V GS=20V, VDS=0V Drain-source on-state resistance V GS=4.5V, I D=30A Drain-source on-state resistance V GS=10V, I D=30A 1Current limited by bondwire ; with an R thJC = 1.5K/W the chip is able to carry ID= 83A at 25C, for detailed information see app.-note ANPS071E available at www.infineon.com/optimos 2Defined by design. Not subject to production test. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-01-17 IPD09N03L Electrical Characteristics Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge ISM VSD trr Qrr V GS=0V, IF=30A V R=-V, IF=lS, diF/dt=100A/s Symbol Conditions min. Values typ. 47.5 1160 450 120 1.5 7.4 13 28.4 7.6 max. - Unit gfs Ciss Coss Crss RG td(on) tr td(off) tf VDS 2*ID *RDS(on)max, ID =30A VGS =0V, VDS =25V, f=1MHz 23.8 - S 1550 pF 600 175 11.1 20 42.6 11.4 ns VDD =15V, VGS =10V, ID =15A, RG =5.4 Qgs Qgd Qg Qoss VDD =15V, ID =15A - 3 9.2 18.2 16.5 2.7 4 12.5 24.2 21.9 - nC VDD =15V, ID =15A, VGS =0 to 5V VDS =15V, ID =15A, VGS =0V nC V V(plateau) VDD =15V, ID =15A IS TC=25C - 0.9 31 29 30 120 1.2 39 37 A V ns nC Page 3 2002-01-17 IPD09N03L 1 Power dissipation Ptot = f (TC) 110 IPD09N03L 2 Drain current ID = f (T C) parameter: VGS 10 V 32 IPD09N03L W 90 80 A 24 P tot ID 100 120 140 160 C 190 70 60 20 16 50 40 30 20 4 10 0 0 20 40 60 80 0 0 20 40 60 80 12 8 100 120 140 160 C 190 TC TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC = 25 C 10 3 IPD09N03L 4 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IPD09N03L K/W A 10 /I D 0 t = 10.0s p DS ID = 10 V 2 DS (on ) Z thJC 100 s 10 -1 R D = 0.50 10 10 1 1 ms -2 0.20 0.10 single pulse 0.05 0.02 0.01 10 ms 10 -3 DC 10 0 10 -1 10 0 10 1 V 10 2 10 -4 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2002-01-17 IPD09N03L 5 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 80 s IPD09N03L 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS IPD09N03L 75 A Ptot = 100W V [V] GS a b c m 30 b c fe d 60 55 50 c 3.0 3.5 24 R DS(on) 4.0 4.5 5.0 5.5 22 20 18 16 14 12 d e f d e f ID 45 40 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 a b 10 8 6 4 VGS [V] = 2 b 3.5 c 4.0 d 4.5 e 5.0 f 5.5 4 V 0 5 0 10 20 30 40 A 60 VDS ID 7 Typ. transfer characteristics ID= f ( VGS ); V DS 2 x ID x RDS(on)max parameter: tp = 80 s 60 8 Typ. forward transconductance g fs = f(I D); T j=25C parameter: g fs 60 A 50 45 S 50 45 35 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 g fs V5 V GS ID 40 40 35 30 25 20 15 10 5 0 0 10 20 30 40 A ID 60 Page 5 2002-01-17 IPD09N03L 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 10 V 20 IPD09N03L 10 Typ. gate threshold voltage VGS(th) = f (T j) parameter: VGS = VDS 2.5 m 16 V 500A R DS(on) 14 12 10 8 6 4 2 0 -60 98% V GS(th) 1.5 50A typ 1 0.5 -20 20 60 100 140 C 200 0 -60 -20 20 60 100 C Tj 180 Tj 11 Typ. capacitances C = f (V DS) parameter: VGS=0V, f=1 MHz 10 4 12 Forward character. of reverse diode IF = f (V SD) parameter: T j , tp = 80 s 10 3 IPD09N03L A pF 10 2 Ciss 10 3 C C oss 10 1 IF T j = 25 C typ T j = 175 C typ T j = 25 C (98%) Crss 10 2 T j = 175 C (98%) 10 0 0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VDS Page 6 VSD 2002-01-17 IPD09N03L 13 Typ. avalanche energy E AS = f (T j) par.: I D = 30 A, V DD = 25 V, R GS = 25 160 15 Drain-source breakdown voltage V(BR)DSS = f (Tj) parameter: ID=10 mA 36 IPD09N03L mJ V 120 V(BR)DSS 34 33 32 E AS 100 80 31 60 30 40 29 28 27 -60 20 0 25 45 65 85 105 125 145 C 185 Tj -20 20 60 100 140 C 200 Tj 14 Typ. gate charge VGS = f (QGate) parameter: ID = 15 A pulsed 16 V IPD09N03L 12 VGS 10 8 6 4 0.2 VDS max 0.5 VDS max 2 0.8 VDS max 0 0 10 20 30 40 nC 55 QGate Page 7 2002-01-17 IPD09N03L Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-01-17 |
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